دیتاشیت CPH6355-TL-W
مشخصات دیتاشیت
| نام دیتاشیت |
CPH6355
|
| حجم فایل |
410.06
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi CPH6355-TL-W
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Power Dissipation (Pd):
1.6W
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Total Gate Charge (Qg@Vgs):
3.9nC@10V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
172pF@10V
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Continuous Drain Current (Id):
3A
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Gate Threshold Voltage (Vgs(th)@Id):
2.6V@1mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
169mΩ@1.5A,10V
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Package:
SOT-23-6
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Tape & Reel (TR)
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Part Status:
Not For New Designs
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
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Rds On (Max) @ Id, Vgs:
169mOhm @ 1.5A, 10V
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Vgs(th) (Max) @ Id:
2.6V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
3.9nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
172pF @ 10V
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FET Feature:
-
-
Power Dissipation (Max):
1.6W (Ta)
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
6-CPH
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Package / Case:
SOT-23-6 Thin, TSOT-23-6
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Base Part Number:
CPH635
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detail:
P-Channel 30V 3A (Ta) 1.6W (Ta) Surface Mount 6-CPH
